Authors : M. Boulakroune and D. Benatia
Abstract: In this study, we describe the improvement of the in-depth resolution of SIMS analysis. So, an algorithm post-erosion is used in order to deconvolve some simulated and real SIMS profiles. The simulated profiles are chosen so that they correspond to real cases encountered by the SIMS analyst and clarify what can be expected from the method. The real SIMS profiles are obtained by analysis of delta-layers of boron-doped silicon in a silicon matrix, analyzed in a Cameca Ims6f at oblique angle incidence. It is shown that the in-depth resolution is improved by a mean factor, in almost of cases, supper than 3 and the shape of both profiles experimental and simulated is retrieved in a very satisfactory way.
M. Boulakroune and D. Benatia , 2007. Beyond of the Experimental Limit of SIMS In-Depth Resolution . Journal of Engineering and Applied Sciences, 2: 808-823.