Authors : Bushra H. Hussein, Hanan K. Hassun, Bushra K.H. Al-Maiyaly, Kadhim A. Aadim and Tagreed M. Al-Saadi
Abstract: Ag2O thin film has been deposited pure and doped with Sb, Sn and Se with thickness about 500 nm by utilizing thermal oxidation during 750 K with ambient oxygen of silver (Ag) thin films that deposited in a vacuum on a glass substrate and Si wafer to manufactory (p-Ag2O/n-Si) heterojunction for photovoltaic devices. The influence of Sb, Sn and Se with ratio 3% dopants on the optical, structural and electrical properties of Ag2O thin film and studied the main parameters of solar cells for p-Ag2O/n-Si heterojunction. The sample p-Ag2O/n-Si: Se with a band gap of 1.7 eV for show efficiency of solar cell 4.25% with Voc 0.35V, Jsc 22 mA/cm2 and FF 0.55 compared with the samples doped with Sb and Sn.
Bushra H. Hussein, Hanan K. Hassun, Bushra K.H. Al-Maiyaly, Kadhim A. Aadim and Tagreed M. Al-Saadi, 2019. Fabrication and Properties of Ag2O/Si Heterojunction Solar Cell Pure and Doped (Sb, Sn and Se). Journal of Engineering and Applied Sciences, 14: 7290-7296.