Authors : Z. Elateche and A. Nouiri
Abstract: The characterization of semiconductors by a Scanning Electron Microscopy (SEM) using techniques like Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) is great interest. Nowadays Monte Carlo (MC) method becomes a very important tool to simulate the diffusion length by electron-matter interaction. In this research, we propose a new Monte Carlo calculation of electron depth and energy dissipation in silicon.
Z. Elateche and A. Nouiri , 2007. Study of the Electron-Matter Interaction (Silicon Case) . Journal of Engineering and Applied Sciences, 2: 788-791.