Authors : Andi Suhandi, Yuyu R. Tayubi and Pepen Arifin
Abstract: The GaAs1-xSbx (GaAsSb) ternary alloy has been studied intensively as the candidates for 1-x x long-wavelength optoelectronic devices such as infrared laser diode and photo detector. The immiscible compositional range in forming GaAsSb ternary alloy through substitution process is very wide. To grow a ternary alloy that have a wide range of compositional miscibility like GaAsSb needed the thermally non-equilibrium growth methods. Metalorganic Chemical Vapor Deposition (MOCVD) is one of the semiconductor thin film growth technique can be use to meet those requirements. One problem faced in growing GaAsSb thin films by MOCVD is the high carbon contamination in the grown films derived from metalorganic sources in the form of methyl compound. The high carbon contamination will degrade the electrical properties of grown films. On the metalorganic sources in the form of Trisdimethylamino compound such as Trisdimethyl Amino Arsenic (TDMAAs) and Trisdimethyl Amino Antimony (TDMASb), the bond between As/Sb atom and C atom in their chemical bonding structure buffered by N atom, so that incorporation of C atom into grown films can be reduced. In addition, these metalorganic sources has a low decomposition temperature, approximately 340°C and convenient vapor pressure for MOCVD growth. Generally semiconductor thin films grown on a relatively low temperature will have a good quality of morphology and physical properties. In this research, the MOCVD growth of metastable GaAsSb ternary alloy thin films using TMGa, TDMAAs and TDMASb has been done. This study describes the crystal structure, surface morphology and optical properties of GaAsSb thin films grown by Vertical-MOCVD.
Andi Suhandi, Yuyu R. Tayubi and Pepen Arifin, 2016. Growth of GaAsSb Thin Film by Vertical-MOCVD and their Characterization. Journal of Engineering and Applied Sciences, 11: 2788-2793.