Abstract: Tungsten silicide thin films were deposited on a Si substrate by magnetron RF sputtering of a composite target. In the first experiment, sputtering of a WSi2 target was performed in a silane-argon atmosphere (reactive sputtering). Thin films with ratio Si/W = 1.07 were obtained at the largest partial silane pressure allowed for in the sputtering apparatus. In the second experiment, Si richer thin films were obtained by non-reactive sputtering of a WSi2.7 target where a Si/W ratio of 1.7 was found. The ratio Si/W was measured by the Rutherford backscattering technique. After annealing for 30 minutes in a N2 atmosphere at 1000 C X-ray diffraction shows the tetragonal structure of WSi2. The resistivity value of these thin films is found to be about 60µ -cm.