Abstract: A Dynamic Random Access Memories (DRAM) memory cell is a capacitor that is charged to produce a 1 or a 0. Over the years, several different structures have been used to create the memory cells on a chip. In today’s technologies, the capacitive storage element of the memory cell is used to create trenched filled with dielectric material. However to progress to the next generation DRAM, all the major physical limitations like circuit complexity, longer read/write times and delays of the 1-Transistor (1-T) and capacitor storage cell need to overcome. In this research, a 4-bit memory column cell for DRAM is presented. To design the column cell, 3-transistor DRAM is chosen as it is distinguished from the one transistor cell to rely on a driver transistor. Moreover, the column cell operates as a constant current source during the discharge of the bit-line. CEDEC 0.18 μm CMOS process has been utilized to design the column cell. Therefore, the simulated results show that the designed circuit has been operates successfully to comply with the DRAM.