Abstract: A fully integrated concurrent dual-band Low Noise Amplifier (LNA) is introduced and simulated in 0.18 μm CMOS technology. The LNA is able to simultaneous operate at two different frequency bands (2.4 and 5.8 GHz) which may use in Bluetooth and WLAN applications. The architecture uses a concurrent cascode LNA with capacitive positive feedback for improving the power gain and provides simultaneous narrow band matching at the both frequencies. The LNA provides very good power gain and matching at both frequencies. Measured results show input return losses of 15.8 and -16.17 dB, output matching of 32.5 and -13.47 dB, power gain is about 19.55 and 15.5 dB and its noise figure is about 1.12 and 1.7 dB at 2.4 and 5.8 GHz, respectively. The circuit delivers 4.09 mA of current from 1.8 V power supply.