Abstract: Vacuum deposited Bismuth-Silicon junctions of different areas had been studied. Electrical characterisations of the junctions were carried out and electronic parameters such as surface conductance, ideality factor and barrier heights were determined. The surface areas of the junctions were found to affect the surface conductance while the values of the ideality factor and the barrier height showed no significant dependence on the surface area of the junctions. The values of the ideality factor, which range between 0.70-0.83 revealed that, the contacts are close to ideal (i.e., unity). This equally stresses the fact that vacuum deposition is an ideal method for making metal-semiconductor junctions.