Abstract: Chemical bath deposition technique for obtaining photoconductivity Bismuth Sulphide (Bi2S3) thin films of thickness of about 0.07-0.19 �m is reported. At room temperature, the deposition ranges from 1-7.5 h beyond which the films start to detach from the substrate. These films show a change in dark resistance of 0.2 m for a change of 0.12 �m in thickness. The dark conductivity of the film increased by a factor of 3 when annealed at 150�C for 2 h. The films showed a photo current to dark current ratio of 75-150 for the as-prepared film under 1 kWm-2 tungsten halogen illumination. These results suggest that post deposited annealing will enhance the performance of the films in the area of optoelectronic applications.