Abstract: In this study researchers have studied the effects of nonlinear gain and thermal carrier escape on dynamic characteristics of GaAs/InGaAs self-assembled quantum dot laser with considering the homogeneous and inhomogeneous broadening of the optical gain using fourth order Runge-Kutta method. The calculations show that the thermal carrier escape leads to shift the dominant lasing mode at the low injection currents. The number of lasing modes increases for the larger injection currents. With exceeding the FWHM of homogeneous broadening from the full width at half maximum FWHM of inhomogeneous broadening, the dynamic and static characteristics degrade and SAQD-LD reaches the steady-state slower. The threshold current, the steady-state photons and the dynamic-characteristics degrade and SAQD-LD reaches the steady-state slower as the FWHM of inhomogeneous broadening and carrier relaxation life time increase.