References

Albrecht, J.D., P.P. Ruden, S. Limpijumnong, W.R.L. Lambrecht and K.F. Brennan, 1999. High field electron transport properties of bulk ZnO. J. Applied Phys., 86: 6864-6867.
CrossRef  |  Direct Link  |  

Arabshahi, H., 2009. Comparison of SiC and ZnO field effect transistors for high power applications. Modern Phys. Lett. B, 23: 2533-2540.
CrossRef  |  Direct Link  |  

Arabshahi, H., 2009. Potential performance of SiC and GaNbased metal semiconductor field effect transistors. Brazilian J. Phys., 39: 35-38.
Direct Link  |  

Ashcroft, N.W. and N.D. Mermin, 1975. Solid State Physics. Holt, Rinhart and Winston, New York.

Bertazzi, F., M. Goano and E. Bellotti, 2007. Electron and hole transport in bulk ZnO: A full band monte carlo study. J. Electron. Mater., 36: 857-863.
CrossRef  |  Direct Link  |  

Farahmand, M., C. Garetto, E. Bellotti, K.F. Brennan and M. Goano et al., 2001. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries. IEEE Trans. Electron Devices, 48: 535-542.
CrossRef  |  Direct Link  |  

Furno, E., F. Bertazzi, M. Goano, G. Ghione and E. Bellotti, 2008. Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation. Solid-State Elecron., 52: 1796-1801.
CrossRef  |  

Jacoboni, C. and P. Lugli, 1989. The Monte Carlo Method for Semiconductor and Device Simulation. Springer-Verlag, New York.

Moglestue, C., 1993. Monte Carlo Simulation of Semiconductor Devices. 1st Edn., Chapman and Hall, Netherlands, ISBN-13: 9780412477706, pp: 336.

O'Leary, S.K., B.F. Foutz, M.S. Shur and L.F. Eastman, 2006. Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN and InN: A review. J. Mater. Sci. Mater. Electron., 17: 87-126.
CrossRef  |  Direct Link  |  

Ozgur, U., Y.I. Alivov, C. Liu, A. Teke and M.A. Reshchikov et al., 2005. A comprehensive review of ZnO materials and devices. J. Applied Phys., Vol. 98. 10.1063/1.1992666