Authors : Mahesh Mudavath and K. Harikishore
Abstract: This study describes a CMOS RF front end for long term evolution system applications in a TSMC 0.18�m process, this work use Receiver Architecture including Source Inductive Degeneration LNA in according with LTE system standard for the center frequency of 2.4GHz. The challenges of circuit design are based on low power, low noise figure and high gain. The most important parameters of receiver front-end circuit are Gain, noise figure and linearity. The circuit exhibits a good trade off among low noise, high gain and provides more reverse isolation which is crucial in LNA design.Complete simulation analysis of the circuit results in center frequency of 2.4 GHz with 38.5 dB Voltage Gain, 2.2dB Noise Figure (NF), IIP3 of -6.063dBm, 1-dB Compression Point of -17.13dBm, 50 Ω input impedance, 3dB Power Bandwidth of 450MHz, 11.2dB Power Gain (S21), High Reverse Isolation (S12) = 60 dB, Input Return Loss (S11) =11dB, Power Dissipation of 2.7mW at 1.2V power 12 11 supply.
Mahesh Mudavath and K. Harikishore, 2016. Design of CMOS RF Front-End of Low Noise Amplifier for LTE System Applications. Asian Journal of Information Technology, 15: 4040-4047.