Authors : N. Moussaoui , M. Bouafia and Dj. Boubetra
Abstract: Radiation damage by reactive magnetron sputtering deposition at low energies is connected with marked changes of optical constants of semiconductors. It will be shown, that using ellipsometry and a special model can provide informations about relevant parameter of the amorphization process of GaN/GaAS layer System. The procedure allows the quantification of the radiation damage in the nanometer range and the refractive index of the formed amorphous GaAs.
N. Moussaoui , M. Bouafia and Dj. Boubetra , 2007. Characterization of Radiation Damage by Deposition of GaN on GaAs . Journal of Engineering and Applied Sciences, 2: 1440-1442.