Journal of Engineering and Applied Sciences

Year: 2016
Volume: 11
Issue: 13
Page No. 2889 - 2892

Temperature Measurement Method of the Light-Emitting Diode Chip

Authors : Myshonkov Aleksandr Borisovich, Zheleznikova Olga Evgenyevna and Kokinov Andrey Mihaylovich

References

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Chhajed, S., Y. Xi, Y.L. Li, T. Gessmann and E.F. Schubert, 2005. Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes. J. Appl. Phys., Vol. 97,

Cree News, 2014. Cree first to break 300 lumens-per-watt barrier. Durham, Carolina. www.cree.com/News-and-Events/Cree-News/Press-Releases/2014/March/300LPW-LED-barrier

Kositsyn, A.A. and A.B. Myshonkov, 2013. Development of unit and method for determining the temperature of p-n-transition of LED in actual use. Pract. Exp. Edu., 3: 51-52.

Nikiforov, S.G., 2005. Temperature in life and work of the light-emitting diodes. Compon. Technol., 9: 48-54.

Schubert, E.F., 2006. Light-Emitting Diodes. Cambridge University Press, Cambridge, UK., Pages: 431.

Shybaykin, S.D. and A.B. Myshonkov, 2011. Approximation of chip self-heating curves of LED by the flowing current. Sectoral Aspects Tech. Sci., 12: 23-24.

Shybaykin, S.D. and A.B. Myshonkov, 2012. Simulation of thermal processes in the LED. Sectoral Aspects Tech. Sci., 8: 29-35.

Winnewisser, C., J. Schneider, M. Borsch and H.W. Rotter, 2001. In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation. J. Appl. Phys., 89: 3091-3094.
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Xi, Y. and E.F. Schubert, 2004. Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Appl. Phys. Lett., 85: 2163-2165.
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