Journal of Engineering and Applied Sciences
Year:
2016
Volume:
11
Issue:
1
Page No.
75 - 77
Leakage Current Density and Characteristic Temperature Determination for PbSe/PbSrSe Multiple Quantum Well Structure
Authors :
MajedKhodr
References
Casey Jr., H.C., 1984. Temperature dependence of the threshold current density in InP-Ga0. 28In0. 72As0. 6P0. 4 (λ= 1.3 μm) double heterostructure lasers. J. Appl. Phys., 56: 1959-1964.
Direct Link | Findlay, P.C., C.R. Pidgeon, R. Kotitschke, A. Hollingworth, B.N. Murdin, C.J.G.M. Langerak and G. Springholz, 1998. Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation. Phys. Rev. B., 58: 12908-12908.
Direct Link | Khodr, M., 2013. Effects of quantum efficiency on PbSe/PbSrSe multiple quantum well structures. Proceedings of the International Society for Optics and Photonics SPIE NanoScience+Engineering, September 26, 2013, San Diego, California, United States, pp: 88160P-88160P.
McCann, P., K. Namjou, C. Roller, G. McMillen and P. Kamat, 2007. IV-VI semiconductor lasers for gas phase biomarker detection. Proceedings of the International Confernce on Society for Optics and Photonics Optics East 2007, September 25, 2007, University of Oklahoma, Norman, USA., pp: 675603-675603.
Shen, W.Z., H.F. Yang, L.F. Jiang, K. Wang and G. Yu
et al., 2002. Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications. J. Appl. Phys., 91: 192-198.
Direct Link |