Journal of Engineering and Applied Sciences
Year:
2011
Volume:
6
Issue:
3
Page No.
210 - 215
References
Bai, W.P., N. Lu, J. Liu, A. Ramirez and D.L. Kwong
et al., 2003. Ge MOS characteristics with CVD HfO
2 gate dielectrics and TaN gate electrode. Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers, June 10-12, Francisco, CA., USA., pp: 121-122.
Chui, C.O., H. Kim, D. Chi, B.B. Triplett, P.C. Mcintyre and K.C. Saraswat, 2002. A sub-400°C germanium MOSFET technology with high-k dielectric and metal gate. Proceedings of the International Electron Devices Meeting, (IEDM`02), Francisco, CA., USA., pp: 437-440.
Mandal, S.K., S. Chakraborty, C.K. Maiti, 2005. Ge-channel p-MOSFETs with ZrO
2 gate dielectrics. Microelectron. Eng., 81: 206-211.
CrossRef | Nicholas, G., B.D. Jaeger, D.P. Brunco, P. Zimmerman and G. Eneman
et al., 2007. High-performance deep submicron Ge pMOSFETs with halo implants. IEEE Trans. Electron Devices, 54: 2053-2511.
CrossRef | Pershenkov, V.S., S.V. Cherepko, R.E. Ivanov, A.V. Shalnov, V.V. Abramov, 1999. Single transistor technique for interface trap density measurement in irradiated MOS devices. Microelectron. Reliab., 39: 497-505.
CrossRef | Shasng, H., H. Okorn-Schimdt, K.K. Chan, M. Copel and J.A. Ott
et al., 2002. High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric. Proceedings of the International Electron Devices Meeting, (IEDM`02), Francisco, CA., USA., pp: 441-444.
Skotnicki, T., G. Merckel and T. Pedron, 1988. The voltage-doping transformation: A new approach to the modeling of MOSFET short-channel effects. IEEE Electron Device Lett., 9: 109-112.
CrossRef | Taurus Medici, 2009. Medici User Guide, Version C-2009.06. Synopsys Inc., Schaumburg, IL., USA.
Yamamoto, T., Y. Yamashita, M. Harada, N. Taoka and K. Ikeda
et al., 2007. High performance 60nm gate length germanium p-MOSFETs with Ni germanide metal source/drain. Proceedings of the IEEE International Electron Devices Meeting, Dec. 10-12, Washington, DC., pp: 1041-1043.
Zimmerman, P., G. Nicholas, B. DeJaeger, B. Kaczer and A. Stesmans
et al., 2006. High performance Ge pMOS devices using a Si-compatible process flow. Proceedings of the International Electron Devices Meeting, Dec. 11-13, San Francisco, CA., USA., pp: 1-4.